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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SST25VF020-20-4I-QAE 데이터시트(PDF) 9 Page - Silicon Storage Technology, Inc |
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SST25VF020-20-4I-QAE 데이터시트(HTML) 9 Page - Silicon Storage Technology, Inc |
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9 / 23 page  Data Sheet 2 Mbit SPI Serial Flash SST25VF020 9 ©2006 Silicon Storage Technology, Inc. S71231-07-000 10/06 Read The Read instruction outputs the data starting from the specified address location. The data output stream is con- tinuous through all addresses until terminated by a low to high transition on CE#. The internal address pointer will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically increment to the beginning (wrap-around) of the address space, i.e. for 2 Mbit density, once the data from address location 3FFFFH had been read, the next output will be from address location 00000H. The Read instruction is initiated by executing an 8-bit com- mand, 03H, followed by address bits [A23-A0]. CE# must remain active low for the duration of the Read cycle. See Figure 5 for the Read sequence. FIGURE 5: READ SEQUENCE Byte-Program The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction applied to a pro- tected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Byte-Program instruction. The Byte- Program instruction is initiated by executing an 8-bit com- mand, 02H, followed by address bits [A23-A0]. Following the address, the data is input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TBP for the completion of the internal self-timed Byte-Program operation. See Figure 6 for the Byte-Program sequence. FIGURE 6: Byte-Program Sequence 1231 F04.1 CE# SO SI SCK ADD. 01 2 3 4 5 6 7 8 ADD. ADD. 03 HIGH IMPEDANCE 15 16 23 24 31 32 39 40 70 47 48 55 56 63 64 N+2 N+3 N+4 N N+1 DOUT MSB MSB MSB MODE 0 MODE 3 DOUT DOUT DOUT DOUT 1231 F05.1 CE# SO SI SCK ADD. 01 2 3 4 5 6 7 8 ADD. ADD. DIN 02 HIGH IMPEDANCE 15 16 23 24 31 32 39 MODE 0 MODE 3 MSB MSB MSB LSB |
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