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SST39VF088-90-4I-EK 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc

부품명 SST39VF088-90-4I-EK
상세설명  8 Mbit (x8) Multi-Purpose Flash
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제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST39VF088-90-4I-EK 데이터시트(HTML) 1 Page - Silicon Storage Technology, Inc

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EOL Data Sheet
©2007 Silicon Storage Technology, Inc.
S71227-05-EOL
2/07
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
8 Mbit (x8) Multi-Purpose Flash
SST39VF088
FEATURES:
Organized as 1M x8
Single Voltage Read and Write Operations
– 2.7-3.6V
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 12 mA (typical)
– Standby Current: 4 µA (typical)
Sector-Erase Capability
– Uniform 4 KByte sectors
Block-Erase Capability
– Uniform 64 KByte blocks
Fast Read Access Time:
– 70 and 90 ns
Latched Address and Data
Fast Erase and Byte-Program
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time: 15 seconds (typical)
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 48-lead TSOP (12mm x 20mm)
PRODUCT DESCRIPTION
The SST39VF088 device is a 1M x8 CMOS Multi-Purpose
Flash (MPF) manufactured with SST’s proprietary, high
performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST39VF088 writes (Program or Erase)
with a 2.7-3.6V power supply. It conforms to JEDEC stan-
dard pinouts for x8 memories.
Featuring
high
performance
Byte-Program,
the
SST39VF088 device provides a typical Byte-Program time
of 14 µsec. The devices use Toggle Bit or Data# Polling to
indicate the completion of Program operation. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of 10,000
cycles. Data retention is rated at greater than 100 years.
The SST39VF088 device is suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. They
also improve flexibility while lowering the cost for program,
data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39VF088 is offered in 48-lead TSOP packaging. See
Figure 1 for pin assignments.


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