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SST39VF1602-70-4C-B3KE 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc

부품명 SST39VF1602-70-4C-B3KE
상세설명  16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
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제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST39VF1602-70-4C-B3KE 데이터시트(HTML) 1 Page - Silicon Storage Technology, Inc

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Data Sheet
©2005 Silicon Storage Technology, Inc.
S71223-04-000
11/05
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
FEATURES:
Organized as 1M x16: SST39VF1601/1602
2M x16: SST39VF3201/3202
4M x16: SST39VF6401/6402
Single Voltage Read and Write Operations
– 2.7-3.6V
Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF1602/3202/6402
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF1601/3201/6401
Sector-Erase Capability
– Uniform 2 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature
– SST: 128 bits; User: 128 bits
Fast Read Access Time:
– 70 ns
– 90 ns
Latched Address and Data
Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bits
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm) for 16M and 32M
– 48-ball TFBGA (8mm x 10mm) for 64M
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39VF160x/320x/640x devices are 1M x16, 2M
x16, and 4M x16 respectively, CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared
with alternate approaches. The SST39VF160x/320x/640x
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pinouts for
x16 memories.
Featuring
high
performance
Word-Program,
the
SST39VF160x/320x/640x devices provide a typical Word-
Program time of 7 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware
and
Software
Data
Protection
schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
The SST39VF160x/320x/640x devices are suited for appli-
cations that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories


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