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SST49LF008C-33-4C-NHE 데이터시트(PDF) 2 Page - Silicon Storage Technology, Inc |
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SST49LF008C-33-4C-NHE 데이터시트(HTML) 2 Page - Silicon Storage Technology, Inc |
2 / 36 page 2 Advance Information 4 Mbit / 8 Mbit LPC Serial Flash SST49LF004C / SST49LF008C ©200 Silicon Storage Technology, Inc. S71292-00-000 1/06 scheme. The PDA can be also used to store system con- figuration data (EEPROM replacement). The SST49LF00xC also provides general purpose inputs (GPI) for system design flexibility. The SST49LF00xC flash memory device is manufactured with SST’s proprietary, high-performance SuperFlash tech- nology. The split-gate cell design and thick-oxide tunneling injector attain greater reliability and manufacturability com- pared with alternative technology approaches. The SST49LF00xC device significantly improves performance and reliability, while lowering power consumption. The SST49LF00xC device writes (Program or Erase) in-system with a single 3.0-3.6V power supply. It uses less energy during Erase and Program than alternative flash memory technologies. The total energy consumed is a function of the applied volt- age, current and time of application. Since for any given voltage range, the SuperFlash technology uses less cur- rent to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SuperFlash technology provides fixed Erase and Pro- gram time, independent of the number of Erase/Program cycles that have performed. Therefore the system software or hardware does not have to be calibrated or correlated to the cumulative number of erase cycles as is necessary with alternative flash memory technologies, whose Erase and Program time increase with accumulated Erase/Program cycles. To protect against inadvertent write, the SST49LF00xC device has on-chip hardware and software write protection schemes. It is offered with a typical endur- ance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST49LF00xC product provides a maximum program time of 10 µs per byte with a single-byte Program opera- tion; effectively 5 µs per byte with a dual-byte Program operation and 2.5 µs per byte with a quad-byte Program operation. End-of-Write can be detected by the RY/BY# pin output in AAI mode and by reading the software status reg- ister during an in-system Program or Erase operation. The SST49LF00xC is offered in 32-PLCC, and 32-TSOP packages. In addition, the SST49LF00xC devices are offered in lead-free (non-Pb) package options to address the growing need for non-Pb solutions in electronic compo- nents. Non-Pb package versions can be obtained by order- ing products with a package code suffix of “E” as the environmental attribute in the product part number. See Figures 3 and 4 for pin assignments and Table 1 for pin descriptions. |
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