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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SST39VF6401-90-4C-B1K 데이터시트(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST39VF6401-90-4C-B1K 데이터시트(HTML) 10 Page - Silicon Storage Technology, Inc |
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10 / 32 page  10 Data Sheet 16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 ©2005 Silicon Storage Technology, Inc. S71223-04-000 11/05 TABLE 7: CFI QUERY IDENTIFICATION STRING1 FOR SST39VF160X/320X/640X Address Data Data 10H 0051H Query Unique ASCII string “QRY” 11H 0052H 12H 0059H 13H 0001H Primary OEM command set 14H 0007H 15H 0000H Address for Primary Extended Table 16H 0000H 17H 0000H Alternate OEM command set (00H = none exists) 18H 0000H 19H 0000H Address for Alternate OEM extended Table (00H = none exits) 1AH 0000H T7.1 1223 1. Refer to CFI publication 100 for more details. TABLE 8: SYSTEM INTERFACE INFORMATION FOR SST39VF160X/320X/640X Address Data Data 1BH 0027H VDD Min (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1CH 0036H VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1DH 0000H VPP min. (00H = no VPP pin) 1EH 0000H VPP max. (00H = no VPP pin) 1FH 0003H Typical time out for Word-Program 2N µs (23 = 8 µs) 20H 0000H Typical time out for min. size buffer program 2N µs (00H = not supported) 21H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms) 22H 0005H Typical time out for Chip-Erase 2N ms (25 = 32 ms) 23H 0001H Maximum time out for Word-Program 2N times typical (21 x 23 = 16 µs) 24H 0000H Maximum time out for buffer program 2N times typical 25H 0001H Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms) 26H 0001H Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms) T8.3 1223 TABLE 9: DEVICE GEOMETRY INFORMATION FOR SST39VF1601/1602 Address Data Data 27H 0015H Device size = 2N Bytes (15H = 21; 221 = 2 MByte) 28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface 29H 0000H 2AH 0000H Maximum number of byte in multi-byte write = 2N (00H = not supported) 2BH 0000H 2CH 0002H Number of Erase Sector/Block sizes supported by device 2DH 00FFH Sector Information (y + 1 = Number of sectors; z x 256B = sector size) 2EH 0001H y = 511 + 1 = 512 sectors (01FF = 511 2FH 0010H 30H 0000H z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16) 31H 001FH Block Information (y + 1 = Number of blocks; z x 256B = block size) 32H 0000H y = 31 + 1 = 32 blocks (001F = 31) 33H 0000H 34H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256) T9.0 1223 |
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