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TDA1561Q 데이터시트(PDF) 8 Page - NXP Semiconductors |
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TDA1561Q 데이터시트(HTML) 8 Page - NXP Semiconductors |
8 / 24 page 1997 Aug 14 8 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q DC CHARACTERISTICS VP = 14.4 V; Tamb =25 °C; measured in Fig.6; unless otherwise specified. Note 1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP =8to18V. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VP supply voltage note 1 6.0 14.4 18.0 V Iq quiescent current RL = ∞− 95 150 mA Istb standby current − 150 µA VC average electrolytic capacitor voltage at pin 11 − 7.1 − V ∆V O DC output offset voltage on state −− 150 mV mute state −− 50 mV Mode select switch (see Fig.4) Vms voltage at mode select pin (pin 3) standby condition 0 − 1V mute condition 2 − 3V on condition (SE/BTL mode) 4 − 5.5 V on condition (SE mode only) 7.5 − VP V Ims switch current through pin 3 Vms =5V −− 40 µA Protection Tdis BTL disable temperature − 145 −°C Fig.4 Switching levels of mode select switch. handbook, halfpage ,,,,,,, ,,,,,,, ,,,,,,, 0 MLD216 V 1 2 3 4 5 6 7 8 P SE Only ,,,,,,, ,,,,,,, SE/BTL ,,,,,,, ,,,,,,, ,,,,,,, Standby Mute |
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