Characteristics

STPS20H100C

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1

Characteristics

When the diodes 1 and 2 are used simultaneously:

Table 1.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

RMS forward current

30

A

Average

forward current

δ = 0.5

TO-220AB

Per diode

Per device

10

A

TO-220FPAB

20

250

A

Repetitive peak reverse current

1

A

Non repetitive peak reverse current

3

A

Repetitive peak avalanche power

10800

W

Storage temperature range

-65 to + 175

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

Per diode

1.6

°C/W

TO-220FPAB

Per diode

4

Total

0.9

°C/W

TO-220FPAB

Total

3.2

Coupling

0.15

°C/W

TO-220FPAB

Coupling

2.5

dPtot

dTj

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1

Rth j a

–

()

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