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TDA4866 데이터시트(PDF) 5 Page - NXP Semiconductors

부품명 TDA4866
상세설명  Full bridge current driven vertical deflection booster
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA4866 데이터시트(HTML) 5 Page - NXP Semiconductors

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1999 Jun 14
5
Philips Semiconductors
Product specification
Full bridge current driven vertical deflection
booster
TDA4866
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages referenced to pin 5 (GND); unless
otherwise specified.
Notes
1. Maximum output currents I4 and I6 are limited by current protection.
2. For VP > 13 V the guard voltage V8 is limited to 13 V.
3. Internally limited by thermal protection; switching point
≥150 °C.
4. Equivalent to discharging a 200 pF capacitor through a 0
Ω series resistor.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
supply voltage (pin 3)
0
30
V
VFB
flyback supply voltage (pin 7)
0
60
V
IFB
flyback supply current
0
±1.8
A
V1,V2
input voltage
0
VP
V
I1,I2
input current
0
±5mA
V4,V6
output voltage
0
VP
V
I4,I6
output current
note 1
0
±1.8
A
V9
feedback voltage
0
VP
V
I9
feedback current
0
±5mA
V8
guard voltage
note 2
0
VP + 0.4
V
I8
guard current
0
±5mA
Tstg
storage temperature
−20
+150
°C
Tamb
operating ambient temperature
−20
+75
°C
Tj
junction temperature
note 3
−20
+150
°C
Ves
electrostatic handling for all pins
note 4
−500
+500
V
SYMBOL
PARAMETER
VALUE
UNIT
Rth(j-mb)
thermal resistance from junction to mounting base
4
K/W


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