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KDS160E 데이터시트(PDF) 1 Page - KEC(Korea Electronics) |
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KDS160E 데이터시트(HTML) 1 Page - KEC(Korea Electronics) |
1 / 2 page 2001. 12. 13 1/2 SEMICONDUCTOR TECHNICAL DATA KDS160E SILICON EPITAXIAL PLANAR DIODE Revision No : 3 ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : ESC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. MAXIMUM RATING (Ta=25 ) ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 D C 1 2 E 1. ANODE 2. CATHODE F 0.13 0.05 F +_ +_ +_ +_ +_ +_ ELECTRICAL CHARACTERISTICS (Ta=25 ) Type Name Marking F U CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD - mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) IF=1mA - 0.60 - V VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 Reverse Current IR VR=80V - - 0.5 A Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS |
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