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TC4420CMF 데이터시트(PDF) 3 Page - Microchip Technology |
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TC4420CMF 데이터시트(HTML) 3 Page - Microchip Technology |
3 / 20 page 2004 Microchip Technology Inc. DS21419C-page 3 TC4420/TC4429 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Supply Voltage ..................................................... +20V Input Voltage .................................. – 5V to VDD + 0.3V Input Current (VIN > VDD)................................... 50 mA Power Dissipation (TA ≤ 70°C) 5-Pin TO-220 .................................................... 1.6W CERDIP ....................................................... 800 mW DFN ............................................ ...................Note 2 PDIP ............................................................ 730 mW SOIC............................................................ 470 mW Package Power Dissipation (TA ≤ 25°C) 5-Pin TO-220 (With Heatsink) ........................ 12.5W Thermal Impedances (To Case) 5-Pin TO-220 RθJ-C ...................................... 10°C/W † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V Logic ‘0’, Low Input Voltage VIL —1.3 0.8 V Input Voltage Range VIN –5 — VDD+0.3 V Input Current IIN –10 — +10 µA 0V ≤ V IN ≤ VDD Output High Output Voltage VOH VDD – 0.025 — — V DC TEST Low Output Voltage VOL — — 0.025 V DC TEST Output Resistance, High ROH —2.1 2.8 Ω IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL —1.5 2.5 Ω IOUT = 10 mA, VDD = 18V Peak Output Current IPK —6.0 — A VDD = 18V Latch-Up Protection Withstand Reverse Current IREV — > 1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec Switching Time (Note 1) Rise Time tR —25 35 ns Figure 4-1, CL = 2,500 pF Fall Time tF —25 35 ns Figure 4-1, CL = 2,500 pF Delay Time tD1 —55 75 ns Figure 4-1 Delay Time tD2 —55 75 ns Figure 4-1 Power Supply Power Supply Current IS — — 0.45 55 1.5 150 mA µA VIN = 3V VIN = 0V Operating Input Voltage VDD 4.5 — 18 V Note 1: Switching times ensured by design. 2: Package power dissipation is dependent on the copper pad area on the PCB. |
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