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TC647B 데이터시트(PDF) 3 Page - Microchip Technology |
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TC647B 데이터시트(HTML) 3 Page - Microchip Technology |
3 / 34 page 2003 Microchip Technology Inc. DS21756B-page 3 TC642B/TC647B 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage (VDD) .......................................................6.0V Input Voltage, Any Pin................(GND - 0.3V) to (VDD +0.3V) Operating Temperature Range ....................- 40°C to +125°C Maximum Junction Temperature, TJ ...........................+150°C ESD Protection on all pins ........................................... > 3 kV † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Expo- sure to maximum rating conditions for extended periods may affect device reliability. PIN FUNCTION TABLE Name Function VIN Analog Input CF Analog Output VMIN Analog Input GND Ground SENSE Analog Input FAULT Digital (Open-Drain) Output VOUT Digital Output VDD Power Supply Input ELECTRICAL SPECIFICATIONS Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < TA < +85°C, VDD = 3.0V to 5.5V. Parameters Sym Min Typ Max Units Conditions Supply Voltage VDD 3.0 — 5.5 V Supply Current, Operating IDD — 200 400 µA Pins 6, 7 Open, CF = 1 µF, VIN = VC(MAX) Supply Current, Shutdown Mode IDD(SHDN) — 30 — µA Pins 6, 7 Open, CF = 1 µF, VMIN = 0.35V VOUT Output Sink Current at VOUT Output IOL 1.0 — — mA VOL = 10% of VDD Source Current at VOUT Output IOH 5.0 — — mA VOH = 80% of VDD VIN, VMIN Inputs Input Voltage at VIN or VMIN for 100% PWM Duty Cycle VC(MAX) 2.45 2.60 2.75 V Over-Temperature Indication Threshold VOTF VC(MAX) + 20 mV V For TC642B Only Over-Temperature Indication Threshold Hysteresis VOTF-HYS 80 mV For TC642B Only VC(MAX) - VC(MIN) VC(SPAN) 1.3 1.4 1.5 V Minimum Speed Threshold VMIN VC(MAX) - VC(SPAN) VC(MAX) V Voltage Applied to VMIN to Ensure Shutdown Mode VSHDN —— VDD x 0.13 V Voltage Applied to VMIN to Release Shutdown Mode VREL VDD x 0.19 — — V VDD = 5V Hysteresis on VSHDN, VREL VHYST — 0.03 x VDD —V VIN, VMIN Input Leakage IIN - 1.0 — +1.0 µA Note 1 Pulse-Width Modulator PWM Frequency fPWM 26 30 34 Hz CF = 1.0 µF Note 1: Ensured by design, tested during characterization. 2: For VDD < 3.7V, tSTARTUP and tMP timers are typically 13/f. |
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