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STB50NE10T4 데이터시트(PDF) 5 Page - STMicroelectronics |
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5 / 13 page STB50NE10 Electrical characteristics 5/13 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 50 200 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 50A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50A, di/dt = 100A/µs, VDD = 30V, Tj = 150°C (see Figure 14) 155 815 10.5 ns nC A |
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