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TDF5242 데이터시트(PDF) 10 Page - NXP Semiconductors

부품명 TDF5242
상세설명  Brushless DC motor drive circuit
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDF5242 데이터시트(HTML) 10 Page - NXP Semiconductors

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1997 Sep 12
10
Philips Semiconductors
Preliminary specification
Brushless DC motor drive circuit
TDF5242T
CHARACTERISTICS
VP = 14.5 V ±10%; Tamb = −40 to +85 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
note 1
4
18
V
IP
supply current
note 2
5.2
6.25
mA
VVMOT
input voltage to the output driver
stages
see Fig.1
3
18
V
Thermal protection
TSD
temperature at temperature sensor
causing shut-down
130
140
150
°C
∆T
decrease in temperature before
switch-on after shut-down
TSD − 30 −
K
COMP-A, COMP-B, COMP-C and MOT0
VI
input voltage
−0.5
VVMOT
V
II
input bias current
0.5V<VI <VVMOT − 1.5 V −10
0
µA
VCSW
comparator switching level
note 3
±20
±25
±30
mV
∆VCSW
variation in comparator switching
levels
−3
0
+3
mV
Vhys
comparator input hysteresis
Tamb =25 °C
75
−µV
OUT-NA, OUT-NB, OUT-NC, OUT-PA, OUT-PB and OUT-PC
VO(n)
n-channel driver output voltage
upper transistor;
IO = −100 mA;
Tamb =25 °C
−1.05
−−
V
lower transistor;
IO = 10 mA; Tamb =25 °C
−−
0.35
V
VO(p)
p-channel driver output voltage
upper transistor;
IO = −10 mA; Tamb =25 °C
−1.05
−−
V
lower transistor;
IO = 100 mA; Tamb =25 °C
−−
0.35
V
∆V
OL
variation in saturation voltage
between lower transistors
IO = 100 mA; Tamb =25 °C −−
180
mV
∆VOH
variation in saturation voltage
between upper transistors
IO = −100 mA;
Tamb =25 °C
−−
180
mV
ILIM
current limiting
lower transistor; RO =47 Ω 150
180
250
mA
+AMP IN and
−AMP IN
VI
input voltage
−0.3
VP − 1.7 V
differential mode voltage without
‘latch-up’
−−
±V
P
V
Ib
input bias current
Tamb =25 °C
−−
650
nA
CI
input capacitance
Tamb =25 °C
4
pF
Voffset
input offset voltage
−−
10
mV


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