RJK1525DPS datasheet(3/7 Pages) RENESAS | Silicon N Channel MOS FET High Speed Power Switching

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상세내용

RJK1525DPS

Silicon N Channel MOS FET High Speed Power Switching ( 7 Page)

RENESAS

3 page

RJK1525DPS

Rev.2.00 Feb 08, 2007 page 3 of 6

Main Characteristics

VGS = 5 V

Tc = 75

°C

−25°C

Case Temperature Tc (

°C)

Power vs. Temperature Derating

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Pulse Test

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

VDS = 10 V

Pulse Test

5.5 V

100

300

1000

0.2

0.1

0.05

0.5

0.02

0.01

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

ID = 25 A

12.5 A

8.5 A

Pulse Test

VGS = 10 V

Pulse Test

6 V

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

6.5 V

7 V

10 V

100

150

200

300

100

300

1000

0.3

0.01

0.1

0.03

1000

100

Ta = 25

°C

100

µs

Operation

(Tc

= 25

°C)

= 10

(1shot)

µs

1 ms

Operation in this

area is limited by

DS(on)

1 2 3 4 5 6 7

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