전자부품 데이터시트 검색엔진 |
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TEA1094AM 데이터시트(PDF) 3 Page - NXP Semiconductors |
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TEA1094AM 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 28 page 1996 Jul 15 3 Philips Semiconductors Product specification Hands free IC TEA1094; TEA1094A QUICK REFERENCE DATA VBB =5V; VGND = 0 V; f = 1 kHz; Tamb =25 °C; MUTET = LOW; PD = LOW (TEA1094A only); RL =50 Ω; RVOL =0 Ω; measured in test circuit of Fig.12; unless otherwise specified. Note 1. Corresponds to 200 mW output power. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VBB supply voltage 3.3 − 12.0 V IBB current consumption from pin VBB − 3.1 4.4 mA Gvtx voltage gain from pin MIC to pin MOUT in transmit mode VMIC = 1 mV (RMS); RGAT = 30.1 kΩ 13 15.5 18 dB ∆Gvtxr voltage gain adjustment with RGAT −15.5 − +15.5 dB Gvrx voltage gain in receive mode; the difference between RIN1 and RIN2 to LSP VRIN = 20 mV (RMS); RGAR = 66.5 kΩ; RL =50 Ω 16 18.5 21 dB ∆G vrxr voltage gain adjustment with RGAR −18.5 − +14.5 dB VO(p-p) output voltage (peak-to-peak value) VRIN = 150 mV (RMS); RGAR = 374 kΩ; RL =33 Ω; VBB = 9.0 V; note 1 − 7.5 − V SWRA switching range − 40 − dB ∆SWRA switching range adjustment with RSWR referenced to RSWR = 365 kΩ −40 − +12 dB Tamb operating ambient temperature −25 − +75 °C |
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