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GSS4953 데이터시트(PDF) 2 Page - GTM CORPORATION |
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GSS4953 데이터시트(HTML) 2 Page - GTM CORPORATION |
2 / 5 page GSS4953 Page: 2/5 ISSUED DATE :2006/01/19 REVISED DATE :2006/11/09D Electrical Characteristics (Tj = 25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Gate Threshold Voltage VGS(th) -1.0 - -2.5 V VDS=VGS, ID=-250uA Forward Transconductance2 gfs - 5 - S VDS=-5V, ID=-5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±16V Drain-Source Leakage Current IDSS - - -1 uA VDS=-24V, VGS=0 - - 53 VGS=-10V, ID=-5A Static Drain-Source On-Resistance2 RDS(ON) - - 90 m VGS=-4.5V, ID=-4A Total Gate Charge2 Qg - 11.7 - Gate-Source Charge Qgs - 2.1 - Gate-Drain (“Miller”) Change Qgd - 2.9 - nC ID=-5A VDS=-15V VGS=-10V Turn-on Delay Time2 Td(on) - 9 - Rise Time Tr - 10 - Turn-off Delay Time Td(off) - 37 - Fall Time Tf - 23 - ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 Input Capacitance Ciss - 582 - Output Capacitance Coss - 125 - Reverse Transfer Capacitance Crss - 86 - pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - -0.84 -1.2 V IS=-1.7A, VGS=0V Notes: 1. Surface Mounted on FR4 Board, t 10sec. 2. Pulse width 300us, duty cycle 2%. |
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