RJK6014DPK datasheet(3/7 Pages) RENESAS | Silicon N Channel MOS FET High Speed Power Switching

3 page

RJK6014DPK

REJ03G1517-0200 Rev.2.00 Jun 04, 2007

Page 3 of 6

Main Characteristics

400

300

200

100

150

200

Case Temperature

Tc (

°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

100

300

1000

0.2

0.1

0.05

0.5

0.02

0.01

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

VGS = 10 V

Pulse Test

100

110

1000

0.01

0.1

1000

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

100

2.0

1.6

1.2

0.8

0.4

−25

100 125

150

Case Temperature

Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

VGS = 10 V

Pulse Test

0.2

0.5

0.1

100

VDS = 10 V

Pulse Test

Tc = 75

°C

−25°C

4 A

0.001

0.1

Ta = 25

°C

µs

100

µs

Operation in this

area is limited by

DS(on)

PW = 10 ms

(1shot)

DC Operation

(Tc = 25

°C)

Pulse Test

6 V

7 V

5.2 V

5.4 V

5.6 V

5.8 V

VGS = 5 V

10 V

ID = 8 A

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