RJK6014DPP datasheet(1/4 Pages) RENESAS | Silicon N Channel MOS FET High Speed Power Switching

1 page

REJ03G1531-0100 Rev.1.00 Apr 17, 2007

Page 1 of 3

RJK6014DPP

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1531-0100

Rev.1.00

Apr 17, 2007

Features

• Low on-resistance

• Low leakage current

• High speed switching

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

1. Gate

2. Drain

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

600

Gate to source voltage

VGSS

±30

Drain current

Note4

Drain peak current

ID (pulse)

Note1

Body-drain diode reverse drain current

IDR

Body-drain diode reverse drain peak current

IDR (pulse)

Note1

Avalanche current

IAP

Note3

Avalanche energy

EAR

Note3

0.87

Channel dissipation

Pch

Note2

Channel to case thermal impedance

θch-c

3.57

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25

°C

3. STch = 25

°C, Tch ≤ 150°C

4. Limited by maximum safe operation area

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