RJK6014DPP datasheet(2/4 Pages) RENESAS | Silicon N Channel MOS FET High Speed Power Switching

2 page

RJK6014DPP

REJ03G1531-0100 Rev.1.00 Apr 17, 2007

Page 2 of 3

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

600

—

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

µA

VDS = 600 V, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±30 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

3.0

—

4.5

VDS = 10 V, ID = 1 mA

Static drain to source on state

resistance

RDS(on)

—

0.475

0.575

Ω

ID = 8 A, VGS = 10 V

Note5

Input capacitance

Ciss

—

1800

—

Output capacitance

Coss

—

170

—

Reverse transfer capacitance

Crss

—

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

ID = 8 A

VGS = 10 V

RL = 37.5

Ω

Rg = 10

Ω

Total gate charge

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

VDD = 480 V

VGS = 10 V

ID = 16 A

Body-drain diode forward voltage

VDF

—

0.91

1.50

IF = 16 A, VGS = 0

Note5

Body-drain diode reverse recovery time

trr

—

390

—

IF = 16 A, VGS = 0

diF/dt = 100 A/

µs

Notes: 5. Pulse test

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