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TSA5522 데이터시트(PDF) 9 Page - NXP Semiconductors

부품명 TSA5522
상세설명  1.4 GHz I2C-bus controlled synthesizer
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TSA5522 데이터시트(HTML) 9 Page - NXP Semiconductors

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1996 Jan 23
9
Philips Semiconductors
Product specification
1.4 GHz I2C-bus controlled synthesizer
TSA5522
THERMAL CHARACTERISTICS
CHARACTERISTICS
VCC1 = 4.5 to 5.5 V; VCC2 =VCC1 to 13.2 V; Tamb = −20 to 85 °C; unless otherwise specified; see note 1
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
SO16
110
K/W
SSOP20
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX
UNIT
VCC1
supply voltage (+5 V)
4.5
5.5
V
VCC2
supply voltage (+12 V)
VCC1
13.5
V
ICC1
supply current
22
30
mA
ICC2
supply current
One band switch buffer is ON;
Isource =20mA
27
32
mA
fRF
RF input frequency
64
1400
MHz
DR
divider ratio
15-bit frequency word
256
32767
MHz
Crystal oscillator
fxtal
crystal oscillator input
frequency
Rxtal =25to300 Ω
3.2
4
4.48
MHz
Zxtal
crystal oscillator input
impedance (absolute value)
fi = 4 MHz
600
1200
−Ω
Prescaler
Vi(RF)
RF input level
VCC1 = 4.5 to 5.5 V; see Fig.4;
fi = 80 to 150 MHz
−25
3dB
VCC1 = 4.5 to 5.5 V; see Fig.4;
fi = 150 to 1000 MHz
−28
3dB
VCC1 = 4.5 to 5.5 V; see Fig.4;
fi = 1000 to 1400 MHz
−26
3dB
PNP band switch buffers outputs
|ILO|
output leakage current
VCC2 = 13.5 V; Vo =0V
−10
−−
µA
Vo(sat)
output saturation voltage
Isource = 20 mA; note 1
-
0.2
0.5
V
NPN open-collector outputs P4, P5, P6 and P7; see note 2
|ILO|
output leakage current
VCC1 = 5.5 V; Vo = 13.5 V
−−
10
µA
Vo(sat)
output saturation voltage
Isink = 20 mA; note 3
0.2
0.5
V
COL
allowed capacitive loading
on output pins
VOL = 13.5 V
10
nF
Input ports P7, P5 and P4; see note 2
VIL
LOW level input voltage
−−
1.5
V
VIH
HIGH level input voltage
3
−−
V
AS input (Address Selection)
IIH(AS)
HIGH level input current
VAS =VCC1
−−
50
µA


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