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KMB7D0NP30QA 데이터시트(PDF) 1 Page - KEC(Korea Electronics) |
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1 / 9 page 1/9 SEMICONDUCTOR TECHNICAL DATA KMB7D0NP30QA N and P-Ch Trench MOSFET Revision No : 2 General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. FEATURES N-Channel : VDSS=30V, ID=7A. : RDS(ON)=23.5m (Max.) @ VGS=10V : RDS(ON)=39m (Max.) @ VGS=4.5V P-Channel : VDSS=-30V, ID=-5A. : RDS(ON)=45.5m (Max.) @ VGS=-10V : RDS(ON)=80m (Max.) @ VGS=-4.5V Super High Dense Cell Design. Reliable and rugged. MAXIMUM RATING (Ta=25 ) G1 S1 D1 D1 G2 D2 D2 S2 N-Channel MOSFET P-Channel MOSFET CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS 22 22 V Drain Current DC ID* 7 -5 A Pulsed (note1) IDP 29 -20 Source-Drain Diode Current IS 1.7 -1.7 A Drain Power Dissipation PD* 2 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA* 62.5 /W 1 2 3 4 8 7 6 5 S1 G1 S2 G2 D1 D1 D2 D2 2007. 6. 28 B2 G H B1 1 4 5 8 A P D L T FLP-8 0.20+0.1/-0.05 T P 1.27 MILLIMETERS DIM A 4.85 0.2 + _ B1 3.94 0.2 + _ B2 6.02 0.3 + _ D 0.4 0.1 + _ G 0.15+0.1/-0.05 H 1.63 0.2 + _ L 0.65 0.2 + _ PIN CONNECTION (TOP VIEW) Note : *Sorface Mounted on FR4 Board |
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