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NE3510M04-T2-A 데이터시트(PDF) 4 Page - California Eastern Labs

부품명 NE3510M04-T2-A
상세설명  HETERO JUNCTION FIELD EFFECT TRANSISTOR
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제조업체  CEL [California Eastern Labs]
홈페이지  http://www.cel.com
Logo CEL - California Eastern Labs

NE3510M04-T2-A 데이터시트(HTML) 4 Page - California Eastern Labs

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Data Sheet PG10676EJ01V0DS
4
NE3510M04
Input Power Pin (1 tone) (dBm)
GATE CURRENT vs. INPUT POWER
OUTPUT POWER, GAIN, DRAIN CURRENT,
vs. INPUT POWER
OUTPUT POWER, IM3, DRAIN CURRENT
Input Power Pin (1 tone) (dBm)
20
0
1
5
5
10
5
1
5
0
1
20
15
5
0
–5
–10
10
Pout (1 tone)
IG
Gain
ID
60
50
40
30
20
10
0
f = 4 GHz, VDS = 2V
ID = 15 mA set (Non-RF)
0
0
4
–10
0
1
0
2
0
3
30
20
–10
–20
–30
–40
–50
–60
–70
10
0
f = 4 GHz, VDS = 2V
ID = 15 mA set (Non-RF)
Pout
IM3 (L)
IM3 (H)
IIP3 = +4 dBm
ID
50
45
40
35
30
25
20
15
10
5
0
OIP3 = +20 dBm
Remark The graphs indicate nominal characteristics.


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