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P4C116 데이터시트(Datasheet) 5 Page - Pyramid Semiconductor Corporation

부품명 P4C116
상세내용  ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
PDF  14 Pages
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제조사  PYRAMID [Pyramid Semiconductor Corporation]
홈페이지  http://www.pyramidsemiconductor.com
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P4C116/P4C116L
Page 5 of 14
Document # SRAM110 REV A
AC CHARACTERISTICS—WRITE CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE
WE
WE
WE
WE CONTROLLED)(10,11)
Notes:
10. CE and WE must be LOW for WRITE cycle.
11. OE is LOW for this WRITE cycle to show t
WZ and tOW.
12. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state
13. Write Cycle Time is measured from the last valid address to the first
transitioning address.
t
WC
Sym.
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Parameter
Write Cycle Time
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time
Data Valid to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
–10
–12
–15
–20
–25
–35
Unit
Min Max Min Max Min Max Min Max Min Max Min Max
15
12
12
0
12
0
10
0
0
8
20
15
15
0
15
0
12
0
0
10
25
18
18
0
18
0
15
0
0
15
35
25
25
0
20
0
20
0
0
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE
CE
CE
CE
CE CONTROLLED)(10)
10
8
8
0
8
0
7
0
0
6
12
10
10
0
10
0
8
0
0
7




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