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P4C150 데이터시트(Datasheet) 2 Page - Pyramid Semiconductor Corporation

부품명 P4C150
상세내용  ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM
PDF  11 Pages
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제조사  PYRAMID [Pyramid Semiconductor Corporation]
홈페이지  http://www.pyramidsemiconductor.com
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P4C150
Page 2 of 11
Document # SRAM105 REV A
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
– 0.5 to +7
V
Respect to GND
Terminal Voltage with
– 0.5 to
V
TERM
Respect to GND
V
CC +0.5
V
(up to 7.0V)
T
A
Operating Temperature – 55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
– 55 to +125
°C
Bias
T
STG
Storage Temperature
– 65 to +150
°C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
CAPACITANCES(4)
(V
CC = 5.0V, TA = 25°C, f = 1.0MHz)
Grade(2)
Commercial
Military
Symbol
Parameter
Conditions Typ. Unit
C
IN
Input Capacitance
V
IN = 0V
5
pF
C
OUT
Output Capacitance V
OUT= 0V
7
pF
Ambient Temp
0°C to 70°C
-55°C to +125°C
Gnd
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
RECOMMENDED OPERATING
CONDITIONS
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Symbol
Output High Voltage
(TTL Load)
Output Low Voltage
(TTL Load)
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Test Conditions
I
OH = –4 mA, VCC = Min.
I
OL = +8 mA, VCC = Min
V
CC = Max., VIN = GND to VCC
V
CC = Max., CS = VIH, VOUT = GND to VCC
P4C150
Min.
2.4
2.2
–0.5(3)
–5
–5
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage (2)
Max.
V
CC =+0.5
0.8
+5
+5
Unit
V
V
V
µA
µA
V
0.4
Symbol
Parameter
Temperature
Range
130
N/A
Unit
mA
mA
130
N/A
120
145
115
135
100
125
N/A
120
Commercial
Military
Dynamic Operating Current
I
CC
-10
-12
-15
-20
-25
-35
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this
specification is not implied. Exposure to MAXIMUM rating condi-
tions for extended periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL and IIL not more negative than – 3.0V and
– 100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
POWER DISSIPATION CHARACTERISTICS VS. SPEED
MAXIMUM RATINGS(1)




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