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P4C163 데이터시트(Datasheet) 4 Page - Pyramid Semiconductor Corporation

부품명 P4C163
상세내용  ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS
PDF  12 Pages
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제조사  PYRAMID [Pyramid Semiconductor Corporation]
홈페이지  http://www.pyramidsemiconductor.com
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P4C163/163L
Page 4 of 12
Document # SRAM120 REV C
Symbol
Parameter
Unit
-25
-35
-45
Min Max Min Max Min Max
t
RC
Read Cycle Time
25
35
45
ns
t
AA
Address Access Time
25
35
45
ns
t
AC
Chip Enable
25
35
45
ns
Access Time
t
OH
Output Hold from
3
3
3
ns
Address Change
t
LZ
Chip Enable to
3
3
3
ns
Output in Low Z
t
HZ
Chip Disable to
10
15
20
ns
Output in High Z
t
OE
Output Enable
13
18
20
ns
Low to Data Valid
t
OLZ
Output Enable
3
3
3
ns
Low to Low Z
t
OHZ
Output Enable
12
15
20
ns
High to High Z
t
PU
Chip Enable to
0
0
0
ns
Power Up Time
t
PD
Chip Disable to
20
20
25
ns
Power Down Time
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
READ CYCLE NO. 1 (OE
OE
OE
OE
OE CONTROLLED)(5)
Notes:
5. WE is HIGH for READ cycle.
6. CE
1 is LOW, CE2 is HIGH and OE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with CE
1 transition
LOW and CE
2 transition HIGH.
8. Transition is measured ± 200mV from steady state voltage prior to
change, with loading as specified in Figure 1. This parameter is
sampled and not 100% tested.




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