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P4C167 데이터시트(Datasheet) 4 Page - Pyramid Semiconductor Corporation

부품명 P4C167
상세내용  ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
PDF  10 Pages
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제조사  PYRAMID [Pyramid Semiconductor Corporation]
홈페이지  http://www.pyramidsemiconductor.com
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P4C167
Page 4 of 10
Document # SRAM106 REV A
Notes:
5. CE is LOW and WE is HIGH for READ cycle.
6. WE is HIGH, and address must be valid prior to or coincident with CE
transition LOW.
7. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
8. Read Cycle Time is measured from the last valid address to the first
transitioning address.
TIMING WAVEFORM OF READ CYCLE NO. 2(6)
TIMING WAVEFORM OF READ CYCLE NO. 1(5)
Symbol
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
PU
t
PD
Parameter
Read Cycle Time
Address Access
Time
Chip Enable
Access Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
Chip Disable to
Output in High Z
Chip Enable to
Power Up Time
Chip Disable to
Power Down Time
Min
Min
Min
Min
Min
Min
Min
Max
Max
Max
Max
Max
Max
Max
–10
–12
–15
–20
–25
–35
–45
Unit
10
2
2
0
10
10
5
10
12
2
2
0
12
12
6
12
15
2
2
0
15
15
8
15
20
2
2
0
20
20
10
20
25
2
2
0
25
25
12
25
35
2
2
0
35
35
17
35
45
2
2
0
45
45
20
45
ns
ns
ns
ns
ns
ns
ns
ns
AC CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)




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