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STP12NM50N 데이터시트(PDF) 1 Page - STMicroelectronics |
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1 / 18 page November 2006 Rev 7 1/18 18 STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N N-channel 500V - 0.29 Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh™ Power MOSFET General features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistancel Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Applications ■ Switching application Internal schematic diagram Type VDSS (@Tjmax) RDS(on) ID STB12NM50N 550V <0.38 Ω 11A STD12NM50N 550V <0.38 Ω 11A STF12NM50N 550V <0.38 Ω 11A (1) STP12NM50N 550V <0.38 Ω 11A 1 2 3 TO-220 DPAK D²PAK 1 3 1 2 3 TO-220FP 1 3 www.st.com Order codes Part number Marking Package Packaging STB12NM50N B12NM50N D²PAK Tape & reel STD12NM50N D12NM50N DPAK Tape & reel STF12NM50N F12NM50N TO-220FP Tube STP12NM50N P12NM50N TO-220 Tube |
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