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4 / 18 page Electrical characteristics STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N 4/18 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min Typ. Max Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 500 V dv/dt(1) 1. Characteristic value at turn off inductive load Peak diode recovery voltage slope Vdd=400V, Id=11A, Vgs=10V 44 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 23 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 5.5A 0.29 0.38 Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ. Max Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 5.5A 8S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 880 230 30 pF pF pF Coss eq (2) . 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS Equivalent output capacitance VGS=0, VDS =0V to 400V 130 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=400V, ID = 11A VGS =10V (see Figure 9) 30 6 15 nC nC nC Rg Gate input resistance f=1MHz Gate DC Bias=0 test signal level=20mV open drain 4.5 Ω |
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