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BD243C 데이터시트(PDF) 2 Page - Power Innovations Ltd |
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BD243C 데이터시트(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS 2 JUNE 1973 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA (see Note 5) IB = 0 BD243 BD243A BD243B BD243C 45 60 80 100 V ICES Collector-emitter cut-off current VCE = 55 V VCE = 70 V VCE = 90 V VCE = 115 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 BD243 BD243A BD243B BD243C 0.4 0.4 0.4 0.4 mA ICEO Collector cut-off current VCE = 30 V VCE = 60 V IB = 0 IB = 0 BD243/243A BD243B/243C 0.7 0.7 mA IEBO Emitter cut-off current VEB = 5 V IC = 0 1 mA hFE Forward current transfer ratio VCE = 4 V VCE = 4 V IC = 0.3 A IC = 3 A (see Notes 5 and 6) 30 15 VCE(sat) Collector-emitter saturation voltage IB = 1 A IC = 6 A (see Notes 5 and 6) 1.5 V VBE Base-emitter voltage VCE = 4 V IC = 6 A (see Notes 5 and 6) 2 V hfe Small signal forward current transfer ratio VCE = 10 V IC = 0.5 A f = 1 kHz 20 |h fe| Small signal forward current transfer ratio VCE = 10 V IC = 0.5 A f = 1 MHz 3 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.92 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = 1 A VBE(off) = -3.7 V IB(on) = 0.1 A RL = 20 Ω IB(off) = -0.1 A tp = 20 µs, dc ≤ 2% 0.3 µs toff Turn-off time 1 µs |
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