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BDW74B 데이터시트(PDF) 2 Page - Power Innovations Ltd

부품명 BDW74B
상세설명  PNP SILICON POWER DARLINGTONS
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제조업체  POINN [Power Innovations Ltd]
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BDW74B 데이터시트(HTML) 2 Page - Power Innovations Ltd

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BDW74, BDW74A, BDW74B, BDW74C, BDW74D
PNP SILICON POWER DARLINGTONS
2
AUGUST 1978 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = -30 mA
IB = 0
(see Note 5)
BDW74
BDW74A
BDW74B
BDW74C
BDW74D
-45
-60
-80
-100
-120
V
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
IB = 0
IB = 0
IB = 0
IB = 0
IB = 0
BDW74
BDW74A
BDW74B
BDW74C
BDW74D
-0.5
-0.5
-0.5
-0.5
-0.5
mA
ICBO
Collector cut-off
current
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW74
BDW74A
BDW74B
BDW74C
BDW74D
BDW74
BDW74A
BDW74B
BDW74C
BDW74D
-0.2
-0.2
-0.2
-0.2
-0.2
-5
-5
-5
-5
-5
mA
IEBO
Emitter cut-off
current
VEB =
-5 V
IC = 0
-2
mA
hFE
Forward current
transfer ratio
VCE =
-3 V
VCE =
-3 V
IC = -3 A
IC = -8 A
(see Notes 5 and 6)
750
100
20000
VBE(on)
Base-emitter
voltage
VCE =
-3 V
IC = -3 A
(see Notes 5 and 6)
-2.5
V
VCE(sat)
Collector-emitter
saturation voltage
IB =
-12 mA
IB =
-80 mA
IC = -3 A
IC = -8 A
(see Notes 5 and 6)
-2.5
-4
V
VEC
Parallel diode
forward voltage
IE =
-8 A
IB = 0
-3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.56
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = -3 A
VBE(off) = 3.5 V
IB(on) = -12 mA
RL = 10 Ω
IB(off) = 12 mA
tp = 20 µs, dc ≤ 2%
1
µs
toff
Turn-off time
5
µs


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