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SST36VF1601-70-4E-EK 데이터시트(PDF) 11 Page - Silicon Storage Technology, Inc |
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SST36VF1601-70-4E-EK 데이터시트(HTML) 11 Page - Silicon Storage Technology, Inc |
11 / 26 page 11 © 2000 Silicon Storage Technology, Inc. S71142 373-3 11/00 16 Megabit Concurrent SuperFlash SST36VF1601 / SST36VF1602 Advance Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias ................................................................................................................... -55°C to +125°C Storage Temperature ........................................................................................................................ -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential ............................................................................. -0.5V to VDD + 0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential ......................................................... -1.0V to VDD + 1.0V Package Power Dissipation Capability (Ta = 25°C) ............................................................................................ 1.0W Surface Mount Lead Soldering Temperature (3 Seconds) .................................................................................. 240°C Output Short Circuit Current ............................................................................................................................. 50 mA AC CONDITIONS OF TEST Input Rise/Fall Time ......... 5 ns Output Load ..................... CL = 30 pF See Figures 16 and 17 OPERATING RANGE Range Ambient Temp VDD Commercial 0 °C to +70 °C 2.7-3.6V Extended -20 °C to +85 °C 2.7-3.6V TABLE 8: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V Limits Symbol Parameter Min Max Units Test Conditions IDD Power Supply Current CE#=OE#=VIL,WE#=VIH , all I/Os open, Read 35 mA Address input = VIL/VIH, at f=1/TRC Min. Program and Erase 40 mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max. Concurrent 75 mA ISB Standby VDD Current 20 µA CE#=VIHC, VDD = VDD Max. IALP Auto Low Power Current 20 µA CE#=VILC, VDD = VDD Max., all inputs = VIHC or VILC, WE# = VIHC IRT Reset VDD Current 20 µA RESET# = VSS ± 0.3V ILI Input Leakage Current 1 µA VIN =GND to VDD, VDD = VDD Max. ILO Output Leakage Current 1 µA VOUT =GND to VDD, VDD = VDD Max. VIL Input Low Voltage 0.8 V VDD = VDD Min. VILC Input Low Voltage (CMOS) 0.3 V VDD = VDD Max. VIH Input High Voltage 0.7 VDD VVDD = VDD Max. VIHC Input High Voltage (CMOS) VDD-0.3 V VDD = VDD Max. VOL Output Low Voltage 0.2 V IOL = 100 µA, VDD = VDD Min. VOH Output High Voltage VDD-0.2 V IOH = -100 µA, VDD = VDD Min. 373 PGM T8.2 |
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