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LB1201AS 데이터시트(PDF) 7 Page - Power Innovations Ltd

부품명 LB1201AS
상세설명  DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
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제조업체  POINN [Power Innovations Ltd]
홈페이지  http://www.bourns.com
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LB1201AS 데이터시트(HTML) 7 Page - Power Innovations Ltd

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7
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
PRODUCT
INFORMATION
thyristor to switch into the low-voltage on-state condition. At the end of the negative half cycle, the thyristor
switches off when the current falls below the holding current value (300 mA). Switch-off and re-clipping at
-52 V causes a second pulse of gate current. The wire current drawn by the protector is quasi-sinusoidal
During the positive a.c. voltage period (diode clipping) there is no gate current. During the negative a.c.
voltage period there are two triangular pulses of gate current, which peak at about 80 mA. This is current
which flows into the gate terminal as indicated by the IG current arrow in Figure 2. This direction of current
charges the VBAT supply. This would not be a problem if the VBAT supply was a rechargeable battery.
However, often the supply is generated from a switching mode power supply or the SLIC supply feed has a
series diode which blocks reverse (charging) current flow to the battery. In these cases the supply can only
sink current in the direction shown by the IBAT arrow in Figure 2. Unless the SLIC current, ISLIC, is equal or
greater than IG the value of VBAT will increase, possibly to a level which causes destruction of the SLIC.
The maximum average value of IG occurs when the thyristor only clips the voltage and the peak cathode
current is just beginning to approach the switching (IS) value, see Figure 4. The average current is maximised
under high source impedance conditions (e.g. 600
Ω). In the case of the LB1201AB, it is recommended that
the supply should be able to absorb 700 mA of “wrong way” current. If the supply cannot absorb the current
then a shunt breakdown diode is recommended to provided a path for the gate current to ground (D2 in
Figure 2). High power diodes are expensive, so diode D2 is usually low power, purposely selected to fail
under this a.c. condition and protect the SLIC.
Figure 3. IC PROTECTOR POWER CROSS WAVE FORMS
Time - ms
0
5
10
15
20
-750
-500
-250
0
250
500
750
-100
-75
-50
-25
0
25
50
75
100
Time - ms
0
5
10
15
20
-60
-50
-40
-30
-20
-10
0
10
V
G
V
K
I
K
I
G
AI6XAG


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