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SI1469DH 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI1469DH 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model Si1469DH SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 1.1 V On-State Drain Current a ID(on) VDS ≤ −5 V, VGS = −4.5 V 37 A VGS = −10 V, ID = −2 A 0.064 0.065 VGS = −4.5 V, ID = −1.8 A 0.079 0.081 Drain-Source On-State Resistance a rDS(on) VGS = −2.5 V, ID = −1.5 A 0.124 0.126 Ω Forward Transconductance a gfs VDS = −10 V, ID = −2 A 9 6 S Diode Forward Voltage a VSD IS = −2 A −0.84 −0.83 V Dynamic b Input Capacitance Ciss 558 470 Output Capacitance Coss 104 105 Reverse Transfer Capacitance Crss VDS = −10 V, VGS = 0 V, f = 1 MHz 82 80 pF Total Gate Charge Qg 5 5.5 Gate-Source Charge Qgs 0.80 0.80 Gate-Drain Charge Qgd VDS = −10 V, VGS = −4.5 V, ID = −2.5 A 1.7 1.7 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74370 S-70353 Rev. A, 26-Feb-07 |
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