전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

IRF7342PBF 데이터시트(Datasheet) 2 Page - International Rectifier

부품명 IRF7342PBF
상세내용  HEXFET® Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω)
PDF  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo 

   
 2 page
background image
IRF7342PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.054 –––
V/°C Reference to 25°C, ID = -1mA
––– 0.095 0.105
VGS = -10V, ID = -3.4A
„
––– 0.150 0.170
VGS = -4.5V, ID = -2.7A
„
VGS(th)
Gate Threshold Voltage
-1.0
–––
–––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
3.3
–––
–––
S
VDS = -10V, ID = -3.1A
––– ––– -2.0
VDS = -55V, VGS = 0V
––– –––
-25
VDS = -55V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
–––
––– -100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
26
38
ID = -3.1A
Qgs
Gate-to-Source Charge
–––
3.0
4.5
nC
VDS = -44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.4
13
VGS = -10V, See Fig. 10
„
td(on)
Turn-On Delay Time
–––
14
22
VDD = -28V
tr
Rise Time
–––
10
15
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
43
64
RG = 6.0Ω
tf
Fall Time
–––
22
32
RD = 16Ω,
„
Ciss
Input Capacitance
––– 690
–––
VGS = 0V
Coss
Output Capacitance
––– 210
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
86
–––
ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
StaticDrain-to-SourceOn-Resistance
IDSS
Drain-to-SourceLeakageCurrent
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
54
80
ns
TJ = 25°C, IF = -2.0A
Qrr
Reverse RecoveryCharge
–––
85
130
nC
di/dt = -100A/µs
ƒ
Source-Drain Ratings and Characteristics
–––
–––
––– –––
-27
-2.0
A
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting TJ = 25°C, L = 20mH
RG = 25Ω, IAS = -3.4A. (See Figure 8)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1 inch square copper board, t<10 sec




Html 페이지

1  2  3  4  5  6  7 


데이터시트



관련 부품명

부품명상세내용Html View제조사
IRFD224PBFHEXFET POWER MOSFET VDSS = 250V RDS on = 1.1Ω ID = 0.63A 1 2 3 4 5 MoreInternational Rectifier
IRFBA1405PPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFPG30PBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IR710PBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRLL014HEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFBC40SPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFR9120PBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFBC30APBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF7F3704HEXFET® POWER MOSFET THRU-HOLE TO-39 20V N-CHANNEL 1 2 3 4 5 MoreInternational Rectifier
IRFI614GPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl