전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

IRF7342PBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRF7342PBF
상세내용  HEXFET® Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω)
PDF  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo 

   
 1 page
background image
HEXFET® Power MOSFET
PD - 95200
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
10/7/04
Description
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
SO-8
VDSS = -55V
RDS(on) = 0.105Ω
IRF7342PbF
www.irf.com
1
Parameter
Max.
Units
VDS
Drain- Source Voltage
-55
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-3.4
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V
-2.7
A
IDM
Pulsed Drain Current

-27
PD @TC = 25°C
Power Dissipation
2.0
PD @TC = 70°C
Power Dissipation
1.3
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 20
V
VGSM
Gate-to-Source Voltage Single Pulse tp<10µs
30
V
EAS
Single Pulse Avalanche Energy
‚
114
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
…
–––
62.5
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
l Lead-Free




Html 페이지

1  2  3  4  5  6  7 


데이터시트



관련 부품명

부품명상세내용Html View제조사
IRFD224PBFHEXFET POWER MOSFET VDSS = 250V RDS on = 1.1Ω ID = 0.63A 1 2 3 4 5 MoreInternational Rectifier
IRFBA1405PPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFPG30PBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IR710PBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRLL014HEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFBC40SPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFR9120PBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFBC30APBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF7F3704HEXFET® POWER MOSFET THRU-HOLE TO-39 20V N-CHANNEL 1 2 3 4 5 MoreInternational Rectifier
IRFI614GPBFHEXFET® Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl