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IRLZ34NSPBF 데이터시트(Datasheet) 2 Page - International Rectifier

부품명 IRLZ34NSPBF
상세내용  HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035Ω , ID = 30A )
PDF  11 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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 2 page
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IRLZ34NS/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.065 –––
V/°C Reference to 25°C, ID = 1mA…
–––
––– 0.035
VGS = 10V, ID = 16A „
–––
––– 0.046
VGS = 5.0V, ID = 16A „
–––
––– 0.060
VGS = 4.0V, ID = 14A „
VGS(th)
Gate Threshold Voltage
1.0
––– 2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
11
––– –––
S
VDS = 25V, ID = 16A…
–––
–––
25
VDS = 55V, VGS = 0V
–––
––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -16V
Qg
Total Gate Charge
–––
–––
25
ID = 16A
Qgs
Gate-to-Source Charge
–––
––– 5.2
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
14
VGS = 5.0V, See Fig. 6 and 13 „…
td(on)
Turn-On Delay Time
–––
8.9 –––
VDD = 28V
tr
Rise Time
–––
100 –––
ID = 16A
td(off)
Turn-Off Delay Time
–––
21
–––
RG = 6.5Ω, VGS = 5.0V
tf
Fall Time
–––
29
–––
RD = 1.8Ω, See Fig. 10 „…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
880 –––
VGS = 0V
Coss
Output Capacitance
–––
220 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
94
–––
ƒ = 1.0MHz, See Fig. 5…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
RDS(on)
Static Drain-to-Source On-Resistance
LS
Internal Source Inductance
7.5
ns
IDSS
Drain-to-Source Leakage Current
µA
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.3
V
TJ = 25°C, IS = 16A, VGS = 0V „
trr
Reverse Recovery Time
–––
76
110
ns
TJ = 25°C, IF = 16A
Qrr
Reverse Recovery Charge
––– 190 290
nC
di/dt = 100A/µs „…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
30
110
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
… Uses IRLZ34N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ I
SD ≤ 16A, di/dt ≤ 270A/µs, V
DD ≤ V(BR)DSS,
TJ ≤ 175°C
‚ VDD = 25V, starting TJ = 25°C, L =610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )




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