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IRLZ34NSPBF 데이터시트(Datasheet) 4 Page - International Rectifier

부품명 IRLZ34NSPBF
상세내용  HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035Ω , ID = 30A )
PDF  11 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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 4 page
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IRLZ34NS/LPbF
4
www.irf.com
Fig 7. Typical Source-Drain Diode
ForwardVoltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1000
1200
1400
1
10
100
DS
V
, Drain-to-Source Voltage (V)
A
V
= 0V,
f = 1MHz
C
= C
+ C
, C
SHORTED
C
= C
C
= C
+ C
GS
iss
gs
gd
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
3
6
9
12
15
0
4
8
12
16
20
24
28
32
Q , Total Gate Charge (nC)
G
A
FOR TEST CIRCUIT
SEE FIGURE 13
I
= 16A
V
= 44V
V
= 28V
D
DS
DS
1
10
100
1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T = 25°C
J
V
= 0V
GS
V
, Source-to-Drain Voltage (V)
SD
A
T = 175°C
J
1
10
100
1000
1
10
100
V
, Drain-to-Source Voltage (V)
DS
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
100µs
1ms
10ms
A
T
= 25°C
T
= 175°C
Single Pulse
C
J




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