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IRLZ34NSPBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRLZ34NSPBF
상세내용  HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035Ω , ID = 30A )
PDF  11 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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 1 page
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IRLZ34NSPbF
IRLZ34NLPbF
HEXFET® Power MOSFET
PD - 95583
l
Advanced Process Technology
l
Surface Mount (IRLZ34NS)
l
Low-profile through-hole (IRLZ34NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Lead-Free
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.2
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
Thermal Resistance
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V…
30
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V…
21
A
IDM
Pulsed Drain Current …
110
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
68
W
Linear Derating Factor
0.45
W/°C
VGS
Gate-to-Source Voltage
±16
V
EAS
Single Pulse Avalanche Energy‚…
110
mJ
IAR
Avalanche Current
16
A
EAR
Repetitive Avalanche Energy
6.8
mJ
dv/dt
Peak Diode Recovery dv/dt ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34NL) is available for low-
profile applications.
Description
VDSS = 55V
RDS(on) = 0.035Ω
ID = 30A
2
D Pak
TO-262
S
D
G
07/20/04
l
Logic-Level Gate Drive
www.irf.com
1




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