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SST39WF800A-90-4C-Y1QE 데이터시트(PDF) 10 Page - Silicon Storage Technology, Inc

부품명 SST39WF800A-90-4C-Y1QE
상세설명  8 Mbit (x16) Multi-Purpose Flash
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제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST39WF800A-90-4C-Y1QE 데이터시트(HTML) 10 Page - Silicon Storage Technology, Inc

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10
Data Sheet
8 Mbit Multi-Purpose Flash
SST39WF800A
©2006 Silicon Storage Technology, Inc.
S71258-06-000
07/07
TABLE
8: DC Operating Characteristics, VDD = 1.65-1.95V1
Symbol
Parameter
Limits
Test Conditions
Min
Max
Units
IDD
Power Supply Current
Address input=VILT/VIHT, at f=5 MHz,
VDD=VDD Max
Read
15
mA
CE#=VIL, OE#=WE#=VIH, all I/Os open
Program and Erase
20
mA
CE#=WE#=VIL, OE#=VIH
ISB
Standby VDD Current2
20
µA
CE#=VDD, VDD=VDD Max
ILI
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
1
µA
VOUT=GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
0.2VDD
VDD=VDD Min
VIH
Input High Voltage
0.8VDD
VVDD=VDD Max
VOL
Output Low Voltage
0.1
V
IOL=100 µA, VDD=VDD Min
VOH
Output High Voltage
VDD-0.1
V
IOH=-100 µA, VDD=VDD Min
T8.0 1258
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and VDD = 1.8V. Not 100% tested.
2. 20 µA is the maximum ISB for all SST39WF800A commercial grade devices. 30 µA is the maximum ISB for all 39WF800A industrial
grade devices. For all SST39WF800A commercial and industrial devices, ISB typical is under 5 µA.
TABLE
9: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Power-up to Read Operation
100
µs
TPU-WRITE1
Power-up to Program/Erase Operation
100
µs
T9.0 1258
TABLE 10: Capacitance (TA = 25°C, f=1 MHz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
6 pF
T10.0 1258
TABLE 11: Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
NEND1,2
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
Endurance
10,000
Cycles
JEDEC Standard A117
TDR1
Data Retention
100
Years
JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA
JEDEC Standard 78
T11.0 1258


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