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IRF1104PBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRF1104PBF
상세내용  HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009Ω , ID = 100A )
PDF  9 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRF1104PbF
HEXFET® Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
100
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
71
A
IDM
Pulsed Drain Current

400
PD @TC = 25°C
Power Dissipation
170
W
Linear Derating Factor
1.11
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
350
mJ
IAR
Avalanche Current

60
A
EAR
Repetitive Avalanche Energy

17
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.90
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
VDSS = 40V
RDS(on) = 0.009Ω
ID = 100A
…
TO-220AB
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
02/02/04
www.irf.com
1
PD - 94967




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