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IRFP3710PBF 데이터시트(Datasheet) 2 Page - International Rectifier

부품명 IRFP3710PBF
상세내용  HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025Ω , ID = 57A )
PDF  9 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRFP3710PbF
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
0.12 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance –––
––– 0.025
VGS = 10V, ID = 28A „
VGS(th)
Gate Threshold Voltage
2.0
––– 4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
20
––– –––
S
VDS = 25V, ID = 28A
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
––– 190
ID = 28A
Qgs
Gate-to-Source Charge
–––
–––
26
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
82
VGS = 10V, See Fig. 6 and 13 „
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 50V
tr
Rise Time
–––
59
–––
ID = 28A
td(off)
Turn-Off Delay Time
–––
58
–––
RG = 2.5Ω
tf
Fall Time
–––
48
–––
RD = 1.7Ω, See Fig. 10 „
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 3000 –––
VGS = 0V
Coss
Output Capacitance
–––
640 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
330 –––
ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 28A, di/dt ≤ 460A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ Starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 28A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.3
V
TJ = 25°C, IS = 28A, VGS = 0V „
trr
Reverse Recovery Time
––– 210 320
ns
TJ = 25°C, IF = 28A
Qrr
Reverse RecoveryCharge
––– 1.7
2.6
µC
di/dt = 100A/µs „
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
57
180
A




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