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IRFR2905ZPBF 데이터시트(Datasheet) 2 Page - International Rectifier

부품명 IRFR2905ZPBF
상세내용  HEXFET® Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )
PDF  12 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRFR/U2905ZPbF
2
www.irf.com
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.053
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
11.1
14.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
20
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
29
44
Qgs
Gate-to-Source Charge
–––
7.7
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
12
–––
RG
Gate Input Resistance
–––
1.3
–––
f = 1MHz, open drain
td(on)
Turn-On Delay Time
–––
14
–––
tr
Rise Time
–––66–––
td(off)
Turn-Off Delay Time
–––
31
–––
ns
tf
Fall Time
–––35–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
1380
–––
Coss
Output Capacitance
–––
240
–––
Crss
Reverse Transfer Capacitance
–––
120
–––
pF
Coss
Output Capacitance
–––
820
–––
Coss
Output Capacitance
–––
190
–––
Coss eff.
Effective Output Capacitance
–––
300
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
36
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
240
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
23
35
ns
Qrr
Reverse Recovery Charge
–––
16
24
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 10V
e
VDD = 28V
ID = 36A
RG = 15 Ω
TJ = 25°C, IS = 36A, VGS = 0V e
TJ = 25°C, IF = 36A, VDD = 28V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A
e
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 36A
ID = 36A
VDS = 44V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 20V
VGS = -20V




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