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IRFR2905ZPBF 데이터시트(Datasheet) 4 Page - International Rectifier

부품명 IRFR2905ZPBF
상세내용  HEXFET® Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )
PDF  12 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRFR/U2905ZPbF
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
2400
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
1020304050
QG Total Gate Charge (nC)
0
4
8
12
16
20
VDS= 44V
VDS= 28V
VDS= 11V
ID= 36A
FOR TEST CIRCUIT
SEE FIGURE 13
0.2
0.6
1.0
1.4
1.8
2.2
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec




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