BC558 datasheet(2/2 Pages) DIOTEC

부품명	BC558

상세설명	General Purpose Si-Epitaxial PlanarTransistors

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BC556 ... BC559

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

- VCE = 80 V, (B-E short)

- VCE = 50 V, (B-E short)

- VCE = 30 V, (B-E short)

BC546

BC547

BC548 / BC549

- ICES

–

0.2 nA

15 nA

- VCE = 80 V, Tj = 125°C, (B-E short)

- VCE = 50 V, Tj = 125°C, (B-E short)

- VCE = 30 V, Tj = 125°C, (B-E short)

BC546

BC547

BC548 / BC549

- ICES

–

4 µA

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 2)

- IC = 10 mA, - IB = 0.5 mA

- IC = 100 mA, - IB = 5 mA

- VCEsat

–

80 mV

250 mV

300 mV

650 mV

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

- IC = 10 mA, - IB = 0.5 mA

- IC = 100 mA, - IB = 5 mA

- VBEsat

–

700 mV

900 mV

–

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

- VCE = 5 V, - IC = 2 mA

- VCE = 5 V, - IC = 10 mA

- VBE

600 mV

–

660 mV

–

750 mV

800 mV

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 10 mA, f = 100 MHz

fT

–

150 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

–

3.5 pF

6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

–

10 pF

–

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ

f = 1 kHz, Δf = 200 Hz

BC556 ... BC558

BC559

F

–

2 dB

1 dB

10 dB

4 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 200 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BC546 ... BC549

Available current gain groups per type

Lieferbare Stromverstärkungsgruppen pro Typ

BC556A

BC557A

BC558A

BC556B

BC557B

BC558B

BC559B

BC557C

BC558C

BC559C

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

http://www.diotec.com/

유사한 부품 번호 - BC558

제조업체	부품명	데이터시트	상세설명
Semtech Corporation	BC558	370Kb / 5P	PNP Silicon Epitaxial Planar Transistor for switching and AF applications???
List of Unclassifed Man...	BC558	2Mb / 31P	SEMICONDUCTORS
Unisonic Technologies	BC558	108Kb / 4P	SWITCHING AND AMPLIFIER APPLICATIONS
Continental Device Indi...	BC558	358Kb / 5P	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Siemens Semiconductor G...	BC558	213Kb / 6P	PNP SILICON TRANSISTORS

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유사한 설명 - BC558

제조업체	부품명	데이터시트	상세설명
Diotec Semiconductor	MPSA55	107Kb / 2P	General Purpose Si-Epitaxial PlanarTransistors
	BC556XBK	87Kb / 2P	General Purpose Si-Epitaxial PlanarTransistors
	MMBTA55	107Kb / 2P	General Purpose Si-Epitaxial PlanarTransistors
	MPSA05	107Kb / 2P	General Purpose Si-Epitaxial PlanarTransistors
	BC546	148Kb / 2P	Si-Epitaxial PlanarTransistors
	BC556	144Kb / 2P	Si-Epitaxial PlanarTransistors
	2N3903	98Kb / 2P	Si-Epitaxial PlanarTransistors
	TIP125A	49Kb / 2P	Si-Epitaxial PlanarTransistors
	2N4402	97Kb / 2P	Si-Epitaxial PlanarTransistors
	BC327	143Kb / 2P	Si-Epitaxial PlanarTransistors

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유사한 부품 번호 - BC558

유사한 설명 - BC558

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