IRL1404SPbF

IRL1404LPbF

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRL1404L) is available for low-

S

D

G

Parameter

Max.

Units

160

†

110

†

A

Pulsed Drain Current



640

Power Dissipation

3.8

W

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

520

mJ

Avalanche Current



95

A

Repetitive Avalanche Energy



20

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

°C

Absolute Maximum Ratings

Thermal Resistance

†

Description

04/19/04

PD - 95148

www.irf.com

1

IRL1404S

TO-262

IRL1404L

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

40