©2002 Fairchild Semiconductor Corporation

IRFP140 Rev. B

IRFP140

31A, 100V, 0.077 Ohm, N-Channel Power

MOSFET

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17421.

Features

• 31A, 100V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFP140

TO-247

IRFP140

NOTE: When ordering, include the entire part number.

G

D

S

SOURCE

DRAIN

DRAIN

(FLANGE)

GATE

Data Sheet

January 2002

NOT

RECOMMENDED

FOR

NEW

DESIGNS

POSSIBLE

SUBSTITUTE

PRODUCT

IRFP140N