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FMM3117VN 데이터시트(PDF) 1 Page - Eudyna Devices Inc |
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FMM3117VN 데이터시트(HTML) 1 Page - Eudyna Devices Inc |
1 / 8 page FMM3117VN Datasheet Rev. B2 April, 2004 Eudyna Devices Inc. Eudyna Devices Inc. Eudyna Devices Inc. Eudyna Devices Inc. 1 FMM3117VN 12.5Gbps Dual-drive LN Modulator Driver IC 1. Features 1) High Speed Operation up to 12.5Gbps 2) On-chip 50 ohm Termination for High Speed Data Input 3) Rapid Rise/Fall Time : 25ps (Typ., 20-80%) 4) Adjustable Output Voltage Swing :2.0Vpp to 2.85Vpp (50ohm Load) 5) Adjustable Output Offset Level 6) Single Power Supply Voltage : -5.2V 7) Duty Ratio Adjustment 8) 6mm x 6mm 32-pin Hermetically Sealed Ceramic Package 2. Maximum Ratings The semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. The normal logic operation is not assured even within the ratings. Table 2-1. Maximum Ratings Parameter Symbol Value Unit Supply Voltage Vss -6.50 to 0.0 V Input Voltage Vin -2.0 to 0.5 V Power Supply Current Iss 500 mA Output Swing Control VoltageVip Vss-0.5 to Vss+2.2 V Output Offset Control VoltageVIB1,VIB2 -8.0 to 0.5 V Output Offset Control Current IB1,IB2 50 mA Duty Control Voltage Vdut Vss-0.5 to Vss+2.2 V Output Voltage Vout -3.1 to 0.5 V Storage Temperature Tstg -55 to 125 degC This device contains Gallium Arsenide(GaAs). For safety, please observe the following: (1) Do not put devices in your mouth. Gallium Arsenide is dangerous if ingested. (2) Do not burn, crush, or process chemically. It is dangerous to inhale or ingest the gas, powder, or liquid which results from burning, crushing or chemical processing of the devices. (3) Discard devices separately from industrial and domestic wastes in accordance with the method specified by law. ! GaAs CAUTION |
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