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FMM3117VN 데이터시트(PDF) 1 Page - Eudyna Devices Inc

부품명 FMM3117VN
상세설명  12.5Gbps Dual-drive LN Modulator Driver IC
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제조업체  EUDYNA [Eudyna Devices Inc]
홈페이지  http://www.sei-device.com/index.asp
Logo EUDYNA - Eudyna Devices Inc

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FMM3117VN Datasheet Rev. B2
April, 2004
Eudyna Devices Inc.
Eudyna Devices Inc.
Eudyna Devices Inc.
Eudyna Devices Inc.
1
FMM3117VN
12.5Gbps Dual-drive LN Modulator Driver IC
1. Features
1)
High Speed Operation up to 12.5Gbps
2)
On-chip 50 ohm Termination for High Speed Data Input
3)
Rapid Rise/Fall Time : 25ps (Typ., 20-80%)
4)
Adjustable Output Voltage Swing :2.0Vpp to 2.85Vpp (50ohm Load)
5)
Adjustable Output Offset Level
6)
Single Power Supply Voltage : -5.2V
7)
Duty Ratio Adjustment
8)
6mm x 6mm 32-pin Hermetically Sealed Ceramic Package
2. Maximum Ratings
The semiconductor devices can be permanently damaged by application of stress (voltage,
current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. The
normal logic operation is not assured even within the ratings.
Table 2-1. Maximum Ratings
Parameter
Symbol
Value
Unit
Supply Voltage
Vss
-6.50 to 0.0
V
Input Voltage
Vin
-2.0 to 0.5
V
Power Supply Current
Iss
500
mA
Output Swing Control VoltageVip
Vss-0.5 to Vss+2.2
V
Output Offset Control VoltageVIB1,VIB2
-8.0 to 0.5
V
Output Offset Control Current
IB1,IB2
50
mA
Duty Control Voltage
Vdut
Vss-0.5 to Vss+2.2
V
Output Voltage
Vout
-3.1 to 0.5
V
Storage Temperature
Tstg
-55 to 125
degC
This device contains Gallium Arsenide(GaAs).
For safety, please observe the following:
(1) Do not put devices in your mouth. Gallium Arsenide is
dangerous if ingested.
(2) Do not burn, crush, or process chemically. It is dangerous to
inhale or ingest the gas, powder, or liquid which results from
burning, crushing or chemical processing of the devices.
(3) Discard devices separately from industrial and domestic wastes
in accordance with the method specified by law.
!
GaAs
CAUTION


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