2N2919 datasheet(2/2 Pages) SEMICOA

부품명	2N2919

상세설명	Silicon NPN Transistor

Download	2 Pages

Scroll/Zoom	100%

제조업체	SEMICOA [Semicoa Semiconductor]

홈페이지	http://www.semicoa.com/

Logo

2 / 2 page

Copyright

 2002

Semicoa Semiconductors, Inc.

Rev. H

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 2 of 2

www.SEMICOA.com

2N2919

Silicon NPN Transistor

Data Sheet

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C

Off Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 10 mA

60

Volts

Collector-Base Cutoff Current

ICBO1

ICBO2

ICBO3

VCB = 70 Volts

VCB = 45 Volts

VCB = 45 Volts, TA = 150°C

10

2

2.5

µA

nA

µA

Collector-Emitter Cutoff Current

ICEO

VCE = 5 Volts

2

nA

Emitter-Base Cutoff Current

IEBO1

IEBO2

VEB = 6 Volts

VEB = 5 Volts

10

2

µA

nA

On Characteristics

Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2.0%

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

DC Current Gain

hFE1

hFE2

hFE3

hFE4

hFE2-1/hFE2-2

IC = 10 µA, VCE = 5 Volts

IC = 100 µA, VCE = 5 Volts

IC = 1 mA, VCE = 5 Volts

IC = 10 µA, VCE = 5 Volts

TA = -55°C

IC = 100 µA, VCE = 5 Volts

60

100

150

20

0.9

240

325

600

1.0

Base-Emitter Voltage differential

|VBE1-VBE2|1

|VBE1-VBE2|2

|VBE1-VBE2|3

VCE = 5 Volts, IC = 10 µA

VCE = 5 Volts, IC = 100 µA

VCE = 5 Volts, IC = 1 mA

5

3

5

mVolts

Base-Emitter Voltage differential

at temperature

|VBE1-VBE2|1

|VBE1-VBE2|2

VCE = 5 Volts, IC = 100 µA

TA = 25 °C and -55°C

TA = 25 °C and +125°C

0.8

1

mVolts

Base-Emitter Saturation Voltage

VBEsat1

IC = 1 mA, IB = 100 µA

0.5

1.0

Volts

Collector-Emitter Saturation

Voltage

VCEsat1

IC = 1 mA, IB = 100 µA

0.3

Volts

Dynamic Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Magnitude – Common Emitter, Short

Circuit Forward Current Transfer Ratio

|hFE1|

VCE = 5 Volts, IC = 500 µA,

f = 20 MHz

3

20

Small Signal Short Circuit Forward

Current Transfer Ratio

hFE

VCE = 10 Volts, IC = 1 mA,

f = 1 kHz

150

600

Open Circuit Output Capacitance

COBO

VCB = 5 Volts, IE = 0 mA,

100 kHZ < f < 1 MHz

5

pF

Noise Figure

NF1

NF2

NF3

VCE = 5 Volts, IC = 10 µA,

Rg = 10 kΩ

f = 100 Hz

f = 1 kHz

f = 10 kHz

5

3

dB

Short Circuit Input Impedance

hie

VCB =5V, IC =1mA, f =1kHz

3

30

k

Ω

Open Circuit Output Admittance

hoe

VCB =5V, IC =1mA, f =1kHz

60

µmhos

Open Circuit reverse Voltage Transfer

Ratio

hre

VCB =5V, IC=100µA, f=1kHz

1x10-3

유사한 부품 번호 - 2N2919

제조업체	부품명	데이터시트	상세설명
Seme LAB	2N2919	28Kb / 2P	DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE
Central Semiconductor C...	2N2919	52Kb / 1P	Dual Transistors
Microsemi Corporation	2N2919	304Kb / 4P	NPN SILICON DUAL TRANSISTOR
Seme LAB	2N2919	45Kb / 2P	DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE
New Jersey Semi-Conduct...	2N2919	133Kb / 1P	DIFFERENTIAL AMPLIFIER AND DUAL NPN SILICON TRANSISTOR

More results

유사한 설명 - 2N2919

제조업체	부품명	데이터시트	상세설명
Fairchild Semiconductor	KSC5603D	115Kb / 5P	NPN Silicon Transistor, Planar Silicon Transistor
STMicroelectronics	MJE521	61Kb / 4P	SILICON NPN TRANSISTOR
Seme LAB	BFT33A	21Kb / 2P	NPN SILICON TRANSISTOR
Central Semiconductor C...	CMPT5551	78Kb / 2P	NPN SILICON TRANSISTOR
Central Semiconductor C...	CZT2222A	94Kb / 2P	NPN SILICON TRANSISTOR
NEC	2SC3731	193Kb / 3P	NPN SILICON TRANSISTOR
Sanyo Semicon Device	2SC3486	41Kb / 1P	SILICON NPN TRANSISTOR
NEC	NE685M03	34Kb / 3P	NPN SILICON TRANSISTOR
	2SD774	161Kb / 3P	NPN SILICON TRANSISTOR
	AA1L3Z	119Kb / 2P	NPN SILICON TRANSISTOR
	NE688M23	19Kb / 2P	NPN SILICON TRANSISTOR

More results

2N2919 데이터시트(PDF) 2 Page - Semicoa Semiconductor

2N2919 데이터시트(HTML) 2 Page - Semicoa Semiconductor

유사한 부품 번호 - 2N2919

유사한 설명 - 2N2919

Html Pages

1 2

데이터시트 다운로드

링크 URL