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FDD7N20TF 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FDD7N20TF 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page FDD7N20 / FDU7N20 Rev. A www.fairchildsemi.com 3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 0.1 1 10 0.01 0.1 1 10 20 25 * Notes : 1. 250μs Pulse Test 2. TC = 25 oC VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V VDS,Drain-Source Voltage[V] 0.04 46 8 10 12 1 10 -55 oC 150 oC * Notes : 1. VDS = 25V 2. 250μs Pulse Test 25 oC VGS,Gate-Source Voltage[V] 20 0.0 0.7 1.4 2.1 2.8 3.5 1 10 100 200 Notes: 1. V GS = 0V 2. 250μs Pulse Test 150 oC V SD, Body Diode Forward Voltage [V] 25 oC 0.2 02468 10 0.3 0.6 0.9 1.2 1.5 * Note : TJ = 25 oC VGS = 20V VGS = 10V ID, Drain Current [A] 0.1 1 10 0 100 200 300 400 500 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note: 1. VGS = 0V 2. f = 1MHz Crss VDS, Drain-Source Voltage [V] 30 01 23456 0 2 4 6 8 10 VDS = 160V VDS = 100V * Note : ID = 7A VDS = 50V Qg, Total Gate Charge [nC] |
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