NE32684A-T1 datasheet(1/5 Pages) NEC

부품명	NE32684A-T1

상세설명	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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제조업체	NEC [NEC]

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FEATURES

• VERY LOW NOISE FIGURE:

0.5 dB typical at 12 GHz

• HIGH ASSOCIATED GAIN:

11.5 dB Typical at 12 GHz

•LG = 0.20

µµµµµm, WG = 200 µµµµµm

• LOW COST METAL CERAMIC PACKAGE

• TAPE & REEL PACKAGING OPTION AVAILABLE

ULTRA LOW NOISE

PSEUDOMORPHIC HJ FET

NE32684A

DESCRIPTION

The NE32684A is a pseudomorphic Hetero-Junction FET that

uses the junction between Si-doped AlGaAs and undoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling capabilities. The

mushroom gate also results in lower noise figure and high

associated gain. This device is housed in an epoxy-sealed,

metal/ceramic package and is intended for high volume con-

sumer and industrial applications.

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

GA

NF

1.2

1

0.8

0.6

0.4

0.2

0

1

10

30

24

21

18

15

12

9

6

Frequency, f (GHz)

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

VDS = 2 V, IDS = 10 mA

PART NUMBER

NE32684A

PACKAGE OUTLINE

84AS

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

NF1

Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz

dB

0.5

0.6

GA1

Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz

dB

10.0

11.5

P1dB

Output Power at 1 dB Gain Compression Point, f = 12 GHz

VDS = 2 V, IDS = 10 mA

dBm

8.5

VDS = 2 V, IDS = 20 mA

dBm

10.75

G1dB

Gain at P1dB, f = 12 GHz, VDS = 2 V, IDS = 10 mA

dB

11.0

VDS = 2 V, IDS = 20 mA

dB

11.5

IDSS

Saturated Drain Current, VDS = 2 V,VGS = 0 V

mA

15

40

70

VP

Pinch-off Voltage, VDS = 2 V, IDS = 100

µA

V

-2.0

-0.8

-0.2

gm

Transconductance, VDS = 2 V, ID = 10 mA

mS

45

60

IGSO

Gate to Source Leakage Current, VGS = -3 V

µA

0.5

10.0

RTH (CH-A)

Thermal Resistance (Channel to Ambient)

°C/W

750

RTH (CH-C)

Thermal Resistance (Channel to Case)

°C/W

350

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not for each specimen.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

NOT RECOMMENDED FOR NEW DESIGN

California Eastern Laboratories

유사한 부품 번호 - NE32684A-T1

제조업체	부품명	데이터시트	상세설명
NEC	NE32000	247Kb / 7P	LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
	NE32083A	247Kb / 7P	LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
	NE32084	247Kb / 7P	LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
	NE321000	48Kb / 12P	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
California Eastern Labs	NE321000	135Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

More results

유사한 설명 - NE32684A-T1

제조업체	부품명	데이터시트	상세설명
California Eastern Labs	NE24283B	49Kb / 4P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE321000	135Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE32400	55Kb / 5P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE321000	141Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE24200	47Kb / 4P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE32484A	55Kb / 5P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
	NE32984D	51Kb / 4P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
	NE32584C	57Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE32584	58Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE24200	46Kb / 4P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)

More results

NE32684A-T1 데이터시트(PDF) 1 Page - NEC

NE32684A-T1 데이터시트(HTML) 1 Page - NEC

유사한 부품 번호 - NE32684A-T1

유사한 설명 - NE32684A-T1

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