전자부품 데이터시트 검색엔진 |
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NE32684A-T1 데이터시트(PDF) 1 Page - NEC |
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NE32684A-T1 데이터시트(HTML) 1 Page - NEC |
1 / 5 page FEATURES • VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 GHz •LG = 0.20 µµµµµm, WG = 200 µµµµµm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A DESCRIPTION The NE32684A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume con- sumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. GA NF 1.2 1 0.8 0.6 0.4 0.2 0 1 10 30 24 21 18 15 12 9 6 Frequency, f (GHz) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA PART NUMBER NE32684A PACKAGE OUTLINE 84AS SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF1 Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB 0.5 0.6 GA1 Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB 10.0 11.5 P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA dBm 8.5 VDS = 2 V, IDS = 20 mA dBm 10.75 G1dB Gain at P1dB, f = 12 GHz, VDS = 2 V, IDS = 10 mA dB 11.0 VDS = 2 V, IDS = 20 mA dB 11.5 IDSS Saturated Drain Current, VDS = 2 V,VGS = 0 V mA 15 40 70 VP Pinch-off Voltage, VDS = 2 V, IDS = 100 µA V -2.0 -0.8 -0.2 gm Transconductance, VDS = 2 V, ID = 10 mA mS 45 60 IGSO Gate to Source Leakage Current, VGS = -3 V µA 0.5 10.0 RTH (CH-A) Thermal Resistance (Channel to Ambient) °C/W 750 RTH (CH-C) Thermal Resistance (Channel to Case) °C/W 350 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. ELECTRICAL CHARACTERISTICS (TA = 25°C) NOT RECOMMENDED FOR NEW DESIGN California Eastern Laboratories |
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